IPI60R199CP Infineon N-Ch MOSFET 600V 16A 199mOhm 139W TO-262-3

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IPI60R199CP Infineon N-Ch MOSFET 600V 16A 199mOhm 139W TO-262-3 (I2PAK)

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Specification
ROHS Yes
Polarity/Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Number of Terminals 3
DS Breakdown Voltage-Min 600 V
Number of Elements 1
Continuous Drain Current (ID) 16 A @ Tc
Drain-source On Resistance-Max 199 mΩ
Avalanche Energy Rating (Eas) 436 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 51 A
Transistor Application SWITCHING
Operating Temperature-Max 150 °C
Terminal Position SINGLE
Manufacturer INFINEON TECHNOLOGIES AG
Packaging TO-262AA
Pin Count 3